SACHEM creates components for the photoresist stripping process. 
Photoresist stripping is the last step in the lithography process. Once the photoresist has been deposited, exposed, developed, and the pattern has been transferred to the underlying film, the photoresist has to be removed. Envure ST™ products are used in the non-aqueous formulations used in this strip process, efficiently removing the organic photoresist without damaging the underlying films.
Available products
Stripper formulary for TFT
Tetramethylammonium Hydroxide (TMAH) 20% PG
CAS# 75-89-2/57-55-6
Photoresist Stripper Formulary for IC
Tetrabutylammonium Hydroxide 40% Methanol
CAS# 2052-49-5/67-56-1
Photoresist Stripper Formulary for IC
Tetramethylammonium Hydroxide (TMAH) Pentahydrate Crystals
CAS# 10424-65-4
Photoresist Stripper Formulary for IC
Tetramethylammonium Hydroxide (TMAH) 20% in PG
CAS# 57-55-6/75-59-2
Our goal is to provide you with the solution you have been looking for. Contact us to discuss your application needs or to learn more about:
- TMAH Safety Support Services
- Toll Blending
- Mobius System® Chemical Recycling Services
- Next Generation Alternative to TMAH
Photoresist stripping, or simply ‘resist stripping’, is the removal of unwanted photoresist layers from the wafer. Its objective is to eliminate the photoresist material from the wafer as quickly as possible, without allowing any surface materials under the resist to get attacked by the chemicals used. Resist stripping can be classified into: 1) organic stripping; 2) inorganic stripping; and 3) dry stripping.
SACHEM is a member of SEMI.org. SEMI is the global industry association serving the product design and manufacturing chain of the electronics industry. SEMI provides blog to keep up to date on this industry https://blog.semi.org/blogs
