Damage Free Wet Chemical Etchant for a-InGaZnO TFT | Technical Paper Abstract
Title: Fabrication of Back-Channel-Etch (BCE) a-InGaZnO TFT with a Damage Free Wet Chemical Etchant
Qualcomm MEMS Technologies Inc. Co-Authored technical paper with SACHEM and presented it at the 2014 International Display Workshops in Japan.
Authors: Tze-Ching Fung, Cheonhong Kim, Tallis Chang, John Hong – Qualcomm MEMS Technologies Inc.
Paul Vermeulen, Paul Janseen, Yongqiang Lu, Sian Collins, Laura Robichaux – SACHEM, Inc.
Overview: Qualcomm developed a BCE a-IGZO TFT process with a nearly damage free wet chemical etchant (SACHEM’s proprietary formula). TFT properties and uniformity were evaluated, and their performance was comparable with the values reported based on conventional ESL-type TFT. The low mask counts and small device size of BCE TFT make this process highly attractive to the high volume manufacturing environment.
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